2SA15 SPEC:
Ge PNP Lo-Pwr BJT
Hitachi Semiconductor
V(BR)CBO (V)=16
I(C) Abs.(A) Collector Current=15m
Absolute Max. Power Diss. (W)=80m
I(CBO) Max. (A)=6.0u
h(fe) Min. SS Current gain.=60
@I(C) (A) (Test Condition)=1.0m
@V(CE) (V) (Test Condition)=6.0
f(T) Min. (Hz) Transition Freq=12M
C(obo) (Max) (F)=10p
Status=Discontinued
Package=TO-1